Part Number Hot Search : 
FOD4108V TC2362CT 110ZA1T 2SC44 0521DS R2020 FL208 200117MA
Product Description
Full Text Search
 

To Download 1PMT5939BT3G Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ? semiconductor components industries, llc, 2005 july, 2005 ? rev. 3 1 publication order number: 1pmt5920b/d 1pmt5920b series 3.2 watt plastic surface mount powermite ? package this complete new line of 3.2 watt zener diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. the powermite package has the same thermal performance as the sm a while being 50% smaller in footprint area and delivering on e of the lowest height profiles (1.1 mm) in the industry. because of its small size, it is ideal for use in cellular phones, portable dev ices, business machines and many other industrial/consumer applications. features ? zener breakdown voltage: 6.2 ? 47 v ? dc power dissipation: 3.2 w with tab 1 (cathode) @ 75 c ? low leakage < 5  a ? esd rating of class 3 (> 16 kv) per human body model ? low profile ? maximum height of 1.1 mm ? integral heat sink/locking tabs ? full metallic bottom eliminates flux entrapment ? small footprint ? footprint area of 8.45 mm 2 ? supplied in 12 mm tape and reel t1 = 3,000 units per reel t3 = 12,000 units per reel ? lead orientation in tape: cathode (short) lead to sprocket holes ? powermite is jedec registered as do?216aa ? cathode indicated by polarity band ? pb?free packages are available mechanical characteristics case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable mounting position: any maximum case temperature for soldering purposes: 260 c for 10 seconds plastic surface mount 3.2 watt zener diodes 6.2 ? 47 volts device package shipping ? ordering information 1pmt59xxbt1 powermite 3,000/tape&ree l 12 1: cathode 2: anode powermite case 457 plastic 1 2 marking diagram 1 cathode 2 anode 1pmt59xxbt3 powermite 12,000/tape&ree l http://onsemi.com individual devices are listed on page 2 of this data sheet. 1pmt59xxbt1g powermite (pb?free) 3,000/tape&ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. 1pmt59xxbt3g powermite (pb?free) 12,000/tape&ree l m = date code xxb = specific device code (see table on page 2)  = pb?free package xxb   m
zener voltage regulator i f v i i r i zt v r v z v f 1pmt5920b series http://onsemi.com 2 maximum ratings rating symbol value unit dc power dissipation @ t a = 25 c (note 1) derate above 25 c thermal resistance, junction?to?ambient p d r  ja 500 4.0 248 mw mw/ c c/w thermal resistance, junction?to?lead (anode) r  janode 35 c/w maximum dc power dissipation (note 2) thermal resistance from junction?to?tab (cathode) p d r  jcathode 3.2 23 w c/w operating and storage temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. mounted with recommended minimum pad size, pc board fr?4. 2. at tab (cathode) temperature, t tab = 75 c electrical characteristics (t l = 25 c unless otherwise noted, v f = 1.5 v max. @ i f = 200 madc for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.25 volts @ 200 ma) device * device marking zener voltage (note 3) i zt i r @ v r v r z zt @ i zt (note 4) z zk @ i zk (note 4) i zk v z @ i zt (volts) min nom max (ma) (  a) (v) (  ) (  ) (ma) 1pmt5920bt1, t3,g 20b 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0 1pmt5921bt1, t3,g 21b 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0 1pmt5922bt1, t3,g 22b 7.12 7.5 7.88 50 5.0 6.0 3.0 400 0.5 1pmt5923bt1, t3,g 23b 7.79 8.2 8.61 45.7 5.0 6.5 3.5 400 0.5 1pmt5924bt1, t3,g 24b 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5 1pmt5925bt1, t3,g 25b 9.5 10 10.5 37.5 5.0 8.0 4.5 500 0.25 1pmt5927bt1, t3,g 27b 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25 1pmt5929bt1, t3,g 29b 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25 1pmt5930bt1, t3,g 30b 15.2 16 16.8 23.4 1.0 12.2 10 600 0.25 1pmt5931bt1, t3,g 31b 17.1 18 18.9 20.8 1.0 13.7 12 650 0.25 1pmt5933bt1, t3,g 33b 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25 1pmt5934bt1, t3,g 34b 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25 1pmt5935bt1, t3,g 35b 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25 1pmt5936bt1, t3,g 36b 28.5 30 31.5 12.5 1.0 22.8 28 750 0.25 1pmt5939bt1, t3,g 39b 37.05 39 40.95 9.6 1.0 29.7 45 900 0.25 1pmt5941bt1, t3,g 41b 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25 3. zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25 c. 4. zener impedance derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z (ac) = 0.1 i z (dc) with the ac frequency = 60 hz. * the ?g? suffix indicates pb?free package available.
1pmt5920b series http://onsemi.com 3 typical characteristics 7 5 3 2 figure 1. steady state power derating figure 2. v z to 10 volts 25 50 75 100 125 175 3.5 2.5 2 1.5 1 0 t, temperature ( c) p , maximum power dissipation (w) d 0.1 56 910 v z , zener voltage (volts) 0.5 t l 2 4 6 8 10 1 2 10 8 6 4 2 0 ?2 ?4 v z , zener voltage (volts) v z @ i zt 200 100 70 50 30 20 10 10 20 30 50 70 100 200 v z , zener voltage (volts) v z @ i zt 150 3 78 1 1 1 10 100 i z , zener current (ma) figure 3. v z = 12 thru 47 volts 0 102030405060708090100 v z , zener voltage (volts) i , zener current (ma) z 100 50 30 20 10 1 0.5 0.3 0.2 0.1 2 5 3 figure 4. zener voltage ? to 12 volts figure 5. zener voltage ? 14 to 47 volts figure 6. effect of zener voltage v z , zener voltage (volts) 5 7 10 20 30 50 70 10 0 200 100 70 50 30 20 10 z , dynamic impedance (ohms) z i z(dc) = 1ma 20 ma i z(rms) = 0.1 i z(dc) 10 ma  vz , temperature coefficient (mv/ c)  vz , temperature coefficient (mv/ c)
1pmt5920b series http://onsemi.com 4 figure 7. effect of zener current i z , zener test current (ma) 1 k 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 50 100 200 500 z , dynamic impedance (ohms) z t j = 25 c i z(rms) = 0.1 i z(dc) 22 v 12 v 6.8 v 10,000 1000 100 10 110 v z , reverse zener voltage (volts) c, capacitance (pf) measured @ 50% v r measured @ 0 v bias figure 8. capacitance versus reverse zener voltage 100
1pmt5920b series http://onsemi.com 5 outline dimensions dim min max min max inches millimeters a 1.75 2.05 0.069 0.081 b 1.75 2.18 0.069 0.086 c 0.85 1.15 0.033 0.045 d 0.40 0.69 0.016 0.027 f 0.70 1.00 0.028 0.039 h ?0.05 +0.10 ?0.002 +0.004 j 0.10 0.25 0.004 0.010 k 3.60 3.90 0.142 0.154 l 0.50 0.80 0.020 0.031 r 1.20 1.50 0.047 0.059 s notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 (0.006) per side. s b m 0.08 (0.003) c s t ?a? ?b? s j k ?t? h l j c d s b m 0.08 (0.003) c s t f term. 1 term. 2 r 0.50 ref 0.019 ref powermite  case 457?04 issue d *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 2.54 0.100 0.635 0.025 1.27 0.050 2.67 0.105 0.762 0.030  mm inches  scale 10:1
1pmt5920b series http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 1pmt5920b/d powermite is a registered trademark of and used under a license from microsemi corporation. literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.


▲Up To Search▲   

 
Price & Availability of 1PMT5939BT3G

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X